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  • Publication Date: September 20, 1972
  • Publication Number: GB-1290120-A

Abstract

1290120 Zinc silicate INTERNATIONAL BUSINESS MACHINES CORP 26 April 1971 [4 May 1970] 11311/71 Heading C1A [Also in Division H1] A layer of zinc silicate is deposited on to a semi-conductor substrate from a mixture of zinc propionate and tetraethyl orthosilicate carried in a stream of nitrogen or oxygen with the semi-conductor held at 420‹ C. The mixture is typically obtained by bubbling separate streams of nitrogen through liquid zinc propio. nate and TEOS respectively and mixing the streams with a flow of nitrogen at the entry to the reaction furnace.

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